NTHC5513: Complementary ChipFET™ Power MOSFET 20V

Datasheet: MOSFET — Power, Complementary ChipFET 20 V, +3.9 A / -3.0 A
Rev. 5 (147kB)
Product Overview
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Product Change Notification
This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.
Features
 
  • Complentary N-Channel and P-Channel MOSFET
  • Small Size, 40% Smaller than TSOP-6 Package
  • Leadless SMD Package Featuring Complementary Pair
  • ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages
  • Low RDS(on) in a ChipFET™ Package for High Efficiency Performance
  • Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics
  • RoHS Compliant
Applications
  • Load Switch Applications Requiring Level Shift
  • DC-DC Conversion Circuits
  • Drives Small Brushless DC Motors
  • Designed for Power Management Applications in Portable and Battery Power Products
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHC5513T1G Active
Pb-free
Halide free
NTHC5513 ChipFET-8 1206A-03 1 260 Tape and Reel 3000 $0.2947
Market Leadtime (weeks) : 8 to 12
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHC5513T1G  
 $0.2947 
Pb
H
 Active   
Complementary
Dual
±20
12
1.2
2.9
1.1
N:80.0, P: 200.0
N:60.0, P: 130.0
-
2.3
6
N: 180, P: 185
ChipFET-8
Case Outlines
1206A-03   
Packages
NTHC5513: Complementary ChipFET™ Power MOSFET 20V
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