FQD12N20: Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

Datasheet: FQU12N20-D.pdf
Rev. A (1059kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
Features
 
  • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
  • Low gate charge ( typical 18 nC)
  • Low Crss ( typical 18 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Applications
  • LED TV
  • CRT/RPTV
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQD12N20TM Active
Pb-free
FQD12N20 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.5069
Market Leadtime (weeks) : 17 to 20
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQD12N20TM  
 $0.5069 
Pb
 Active   
N-Channel
Single
200
±30
5
9
55
-
-
280
-
18
700
DPAK-3 / TO-252-3
Case Outlines
369AS   
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