MOSFETs | FDB14AN06L_F085

N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ,

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Overview

N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

  • rDS(ON) = 12.8mΩ(Typ.), VGS = 5V, ID = 60A
  • Qg(tot) = 24nC (Typ.), VGS = 5V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDB14AN06LA0-F085

Lifetime

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

Single

60

20

3

60

125

-

14.6

11.6

-

24

2900

Price N/A

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