NVC020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, Bare Die

Datasheet: MOSFET - N-Channel, Silicon Carbide, Bare Die - 1200 V, 20 mOhm
Rev. 0 (150kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • 1200 V
 
  • TJ= 175°C
  • High Speed Switching with Low Capacitance
   
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
Applications   End Products
  • On Board Charger (OBC)
  • DC DC Inverter
 
  • Automotive EV/HEV
Technical Documentation & Design Resources
Simulation Models (3) Data Sheets (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVC020N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVC020N120SC1 NA MTFRM 1 Contact Sales Office
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVC020N120SC1  
Pb
A
H
P
 Active   
M1
1200
160
20
168
297
175
Case Outlines
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