Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar
  • Max Junction Temperature 175°C
  • Leadless thin SMD package
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (Qg(tot) = 74 nC)
  • Low Effective Output Capacitance (Coss = 113 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 44 mΩ @ Vgs : 18V
  • 650V rated
  • 100% Avalanche Tested
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 3.9 Ω

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTBL060N065SC1

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CAD Model

Pb

A

H

P

H-PSOF8L 9.90x10.38x2.30, 1.20P

1

260

REEL

2000

F

M2

650

46

44

74

133

175

$4.6038

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