Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • TJ = 175°C
  • Ultra Low Gate Charge (Typ. Qg = 61 nC)
  • High Speed Switching with Low Capacitance (Coss = 107 pF)
  • Zero reverse recovery current of body diode
  • Kelvin Source configuration
  • Typ. RDS(on) = 57 mΩ at Vgs = 18V
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NTH4L075N065SC1

Active

Pb

A

H

P

TO-247-4

NA

0

F

M2

650

38

57

61

107

175

$6.4776

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