NTH4L060N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ, TO247−4L

Datasheet: Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, TO-247-4L
Rev. 1 (833kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • High Junction Temperature
 
  • 175°C
  • 900V Rating
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
  • UPS
 
  • Solar
  • Power Devices
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTH4L060N090SC1 Active
Pb-free
Halide free
NTH4L060N090SC1 TO-247-4 340CJ NA Tube 450 $6.2792
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 4,500

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTH4L060N090SC1  
 $6.2792 
Pb
H
 Active   
M2
900
67
60
61.8
107
175
TO-247-4
Case Outlines
340CJ   
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