Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L

Favorite

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Supply
  • Max Junction Temperature 175°C
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 52.8 mΩ at Vgs = 18V, Id = 20A

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

Loading...

NTH4L045N065SC1

Active

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M2

650

55

33

105

162

175

$7.91

More Details

Show More

1-25 of 25

Products per page

Jump to :