Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-7L

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Overview

Silicon Carbide (SiC) MOSFET new family, 1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • Industrial
  • ESS / UPS
  • Solar
  • EV Charger
  • TO-247-4L Package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 75 nC)
  • High Speed Switching with Low Capacitance (Coss = 80 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NTH4L040N120M3S

Active, New

Pb

A

H

P

TO-247-4

NA

0

F

M3S

1200

43

40

4.4

80

175

Price N/A

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