NTH4L040N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−4L

Datasheet: Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L
Rev. 3 (180kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A
 
  • Typical RDS(on) = 40mΩ
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • 1200V Rated
   
Applications   End Products
  • PFC
  • Boost Inverter
  • PV Charging
 
  • Solar Inverter
  • Network Power Supply
  • Charging Stations
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTH4L040N120SC1 Active
Pb-free
Halide free
NTH4L040N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L TO-247-4 340CJ NA Tube 450 $17.7749
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTH4L040N120SC1  
 $17.7749 
Pb
H
 Active   
M1
1200
58
40
106
137
175
TO-247-4
Case Outlines
340CJ   
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Featured Video
Designing Silicon Carbide (SiC) based DC Fast Charging System | Session 2: Dual Active Bridge DC-DC Design
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