Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • TJ = 175°C
  • Ultra Low Gate Charge (Typ. Qg = 262 nC)
  • High Speed Switching with Low Capacitance (Coss = 365 pF)
  • Zero reverse recovery current of body diode
  • Kelvin Source configuration
  • Typ. RDS(on) = 13.5 mΩ at Vgs = 18V
  • 100% UIL Tested
  • RoHS Compliant

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Blocking Voltage BVDSS (V)

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Reference Price

NTH4L018N075SC1

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CAD Model

Pb

A

H

P

TO-247-4

1

245

TUBE

450

F

M2

750

140

13.5

262

365

175

Price N/A

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