Name: Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
Brand: Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
SKU: NTH4L032N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Overview

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Applications

Industrial

End Products

UPS / ESS
Solar
EV Charger

Features

TO-247-4L Package with Kelvin source configuration
Excellent FOM [ = Rdson * Eoss ]
Ultra Low Gate Charge (QG(tot) = 55 nC)
High Speed Switching with Low Capacitance (Coss = 114 pF)
15V to 18V Gate Drive
New M3S technology: 32 mohm RDS(ON) with low Eon and Eoff losses
100% Avalanche Tested
Halide Free and RoHS Compliant

Material Composition

Product Change Notification

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Family

Blocking Voltage BV_DSS (V)

I_D(max) (A)

R_DS(on) Typ @ 25°C (mΩ)

Q_g Total (nC)

Output Capacitance (pF)

T_j Max (°C)

Reference Price

NTH4L032N065M3S

Active, New

TO-247-4

340CJ

260

TUBE

450

M3S

650

114

175

$4.7435

Product Number:

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Silicon Carbide (SiC) MOSFETs | NTH4L032N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

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