NTBG020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900V, 20 mΩ, D2PAK−7L

Datasheet: MOSFET - SiC Power, Single N-Channel, D2PAK-7L, 900 V, 20 mOhm, 112 A
Rev. 2 (232kB)
Product Overview
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Low RDSon
 
  • 20mΩ
  • Ultra Low Gate Charge (Qg tot)
 
  • 200nC
  • Low Output Capacitance (Coss)
 
  • 295pF
  • 100% UIL Tested
   
  • RoHS Compliant
   
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
Technical Documentation & Design Resources
Simulation Models (3) Data Sheets (1)
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTBG020N090SC1 Active
Pb-free
Halide free
NTBG020N090SC1, Silicon Carbide MOSFET, N?Channel, 900V, 20 m?, D2PAK?7L D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $15.937
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG020N090SC1  
 $15.937 
Pb
H
 Active   
N-Channel
Single
900
112
20
200
295
175
D2PAK7 (TO-263-7L HV)
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