NTBG020N090SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

DC-DC Converter
Boost Inverter

End Products

UPS
Solar
Power Supply

Features

Low RDSon
Ultra Low Gate Charge (Qg tot)
Low Output Capacitance (Coss)
100% UIL Tested
RoHS Compliant

Material Composition

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Pricing ($/Unit)

NTBG020N090SC1

Active

D2PAK7 (TO-263-7L HV)

245

REEL

800

900

112

200

295

175

$15.3049

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Silicon Carbide (SiC) MOSFETs | NTBG020N090SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L

Overview

Availability & Samples (size)

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