NTBG020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

DC-DC Converter
Boost Inverter

End Products

Solar
Charging Station
Motor Drive
AUX Power

Features

Low On Resistance
Ultra Low Gate Charge
High Junction Temperature
High UIS, Surge Current, and Avalanche

Material Composition

Product Change Notification

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Pricing ($/Unit)

NTBG020N120SC1

Active

D2PAK7 (TO-263-7L HV)

245

REEL

800

1200

220

258

175

$26.126

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Silicon Carbide (SiC) MOSFETs | NTBG020N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L

Overview

Availability & Samples (size)

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