NTBG020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, D2PAK−7L

Datasheet: MOSFET - Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mOhm
Rev. 3 (255kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Low On Resistance
 
  • RDSson = 20mΩ typ
  • Ultra Low Gate Charge
 
  • 220nC typ
  • High Junction Temperature
 
  • Tj = 175C
  • High UIS, Surge Current, and Avalanche
 
  • 264mJ
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
 
  • Solar
  • Charging Station
  • Motor Drive
  • AUX Power
Technical Documentation & Design Resources
Application Notes (1) Data Sheets (1)
Simulation Models (3)  
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTBG020N120SC1 Active
Pb-free
Halide free
NTBG020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, D2PAK?7L D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $20.4142
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG020N120SC1  
 $20.4142 
Pb
H
 Active   
N-Channel
Single
1200
98
20
220
258
175
D2PAK7 (TO-263-7L HV)
Case Outlines
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