NTH4L020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4L
Rev. 3 (277kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
 
  • Typical RDS(on) = 20mΩ
  • High Speed Switching and Low Capacitance
 
  • Coss = 258pF
  • 100% UIL Tested
   
  • 1200V Rated
   
Applications   End Products
  • PFC
  • Boost Inverter
  • Motor Drives
 
  • UPS
  • Solar Units
  • Charging Stations
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTH4L020N120SC1 Active
Pb-free
Halide free
NTH4L020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L TO-247-4 340CJ NA Tube 450 $19.828
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTH4L020N120SC1  
 $19.828 
Pb
H
 Active   
N-Channel
Single
1200
102
20
220
258
175
TO-247-4
Case Outlines
340CJ   
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