NTH4L028N170M1: SiC MOSFET 1700 V 28 mohm M1 Series in TO247-4LD package

Datasheet: Silicon Carbide (SiC) MOSFET, M1, TO-247-4L
Rev. 0 (247kB)
Product Overview
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Product Change Notification
The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.
Features   Benefits
     
  • TO247-4LD package for low common source inductance
 
  • Reduced EON losses
  • 18V to 20V Gate Drive
 
  • 20V for best performance; 18V for compatibility
  • New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses
 
  • Improved power density
  • 100% Avalanche Tested
 
  • Improved robustness to unexpected incoming voltage spikes or ringing
Applications   End Products
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • Solar Inverter
  • UPS
  • Solid State Transformer
  • Medium Voltage Grid Equipment
  • Energy Storage Systems
  • Hydrogen Electrolyzer
  • Fuel Cells
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTH4L028N170M1 Active 
Pb-free
Halide free
NTH4L028N170M1 TO-247-4 340CJ NA Tube 450 Contact Sales Office
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTH4L028N170M1  
Pb
H
 Active   
M1
1700
81
28
200
200
175
TO-247-4
Case Outlines
340CJ   
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