Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
  • Solar Inverter
  • UPS
  • Solid State Transformer
  • Medium Voltage Grid Equipment
  • Energy Storage Systems
  • Hydrogen Electrolyzer
  • Fuel Cells
  • TO247-4LD package for low common source inductance
  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NTH4L028N170M1

Active

Pb

A

H

P

TO-247-4

NA

0

F

M1

1700

81

28

200

200

175

$29.5909

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