taxonomy_overview_103191

Overview

onsemi EliteSiC Silicon Carbide (SiC) JFET portfolio delivers industry-leading efficiency, power density, and system reliability for advanced power conversion and protection applications. Available from 650 V to 1700 V, the family includes standard EliteSiC JFETs, normally-off Cascode JFETs (CJFETs), and innovative Combo JFET solutions. Featuring ultra-low on-resistance, low gate charge, and high-frequency switching performance, onsemi EliteSiC JFETs help reduce both conduction and switching losses while enabling more compact, energy-efficient power systems. Optimized for AI data center power supplies (PSU), intermediate bus converters (IBC), high-voltage DC-DC converters, and solid-state circuit breakers (SSCB), these devices enable efficient power delivery and fast, reliable protection. Whether improving the efficiency of power conversion or enabling intelligent power distribution, onsemi EliteSiC JFETs provide the performance, robustness, and controllability needed for next-generation energy infrastructure and AI-powered systems.

Categories

SiC JFETs

Our SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V.

SiC Cascode JFETs

Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.

SiC Combo JFETs

SiC Combo JFET represents a revolutionary advancement, combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package.