N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A
  • Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID= 35A
  • Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V
  • Low gate resistance
  • Avalanche rated and 100% tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD8782

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

25

11

N-Channel

Single

20

2.5

35

50

-

14

48

9.4

920

Price N/A

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