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NTHL020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel
Rev. 1 (228kB)
Product Overview
»View Material Composition
» Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
 
  • Typical RDS(on) = 20mΩ
  • High Speed Switching and Low Capacitance
 
  • Coss = 260pF
  • 1200V
   
  • 100% UIL Tested
   
Applications   End Products
  • PFC
  • Boost Inverter
  • PV Charging
 
  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
  • Charging Stations
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHL020N120SC1 Active
Pb-free
Halide free
NTHL020N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $22.6408
Market Leadtime (weeks) : 4 to 8
ON Semiconductor   (2020-09-02 00:00) : 19,800

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTHL020N120SC1  
 $22.6408 
Pb
H
 Active   
N-Channel
Single
1200
103
20
203
260
175
TO-247-3LD
Case Outlines
340CX   
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