Silicon Carbide (SiC) Technology Benefits

SiC devices have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy band gap, and 3x higher thermal conductivity compared to Silicon devices.

High Reliability

onsemi SiC devices have a patented termination structure which provides superior robustness for harsh environmental conditions.

H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960V)


Robustness

onsemi Schottky Barrier SiC Diodes always maintain the best in class behavior in regards to leakage.


Ruggedness

SiC Diodes Ruggedness – Surge and Avalanche

Surge current waveform of a 650V/30A onsemi SiC diode
Avalanche current waveform of a 650V/30A onsemi SiC diode

Wide Bandgap Applications

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