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FDMD8260L: Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

Datasheet: FDMD8260L Dual N-Channel Power Trench® MOSFET
Rev. A (431kB)
Product Overview
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»View Material Composition
» Product Change Notification
This device includes two 60V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.
Features
 
  • Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 15 A
  • Max rDS(on) = 8.7 mΩ at VGS = 4.5 V, ID = 12 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • Termination is Lead-free and RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMD8260L Active
Pb-free
Halide free
FDMD8260L PQFN-12 483BN 1 260 Tape and Reel 3000 $1.4609
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMD8260L  
 $1.4609 
Pb
H
 Active   
N-Channel
Dual
60
±20
3
15
37
-
Q1=Q2=8.7
Q1=Q2=5.8
-
25
3745
PQFN-12
Case Outlines
483BN   
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