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FCP260N65S3: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220

Datasheet: MOSFET – Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 12 A, 260 mΩ
Rev. 4 (212kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features   Benefits
     
  • 700 V @ TJ = 150 °C
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
 
  • Lower switching loss
  • Ultra Low Gate Charge (Typ. Qg= 24 nC)
 
  • Lower switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • Internal Gate resistance: 8.7ohm
 
  • Lower peak Vds and lower Vgs oscillation
  • Typ. RDS(on) = 222 mΩ
   
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
Applications   End Products
  • Computing
  • Consumer
  • Industrial
 
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FCP260N65S3 Active
Pb-free
Halide free
FCP260N65S3, N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220 TO-220-3 340AT NA Tube 800 $0.8081
Market Leadtime (weeks) : 4 to 8

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCP260N65S3  
 $0.8081 
Pb
H
 Active   
N-Channel
Single
650
±30
4.5
12
90
-
-
260
-
24
1010
TO-220-3
Case Outlines
340AT   
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