NGTB25N120FL3: IGBT, Ultra Field Stop - 1200V 25A
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ulatra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
UPS and solar applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
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Technical Documentation & Design Resources
| Simulation Models (3) | Package Drawings (1) |
| Data Sheets (1) |
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Availability & Samples
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Specifications
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Case Outline |
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| NGTB25N120FL3WG | Active |
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NGTB25N120FL3 | TO-247-3 | 340AL | NA | Tube | 30 | Contact Sales Office
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| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
Case Outlines
340AL
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