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NTMFS4C029N: Single N−Channel Power MOSFET 30 V, 46 A, 5.88mΩ

Datasheet: MOSFET — Power, Single, N-Channel, SO-8 FL 30 V, 46 A
Rev. 1 (134kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL
Features
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant
Applications
  • CPU Power Delivery
  • DC−DC Converters
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTMFS4C029NT1G Active
Pb-free
Halide free
NTMFS4C029N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 1500 $0.15
NTMFS4C029NT3G Active
Pb-free
Halide free
NTMFS4C029N SO-8FL / DFN-5 488AA 1 260 Tape and Reel 5000 $0.2665
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 403,500
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 10,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFS4C029NT1G  
 $0.15 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
46
0.69
-
9
5.88
15
18.9
987
SO-8FL / DFN-5
NTMFS4C029NT3G  
 $0.2665 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
46
0.69
-
9
5.88
15
18.9
987
SO-8FL / DFN-5
Case Outlines
488AA   
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