feedback
Rate this webpage
Need
Support?

FDMC86570L: N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ

Datasheet: FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET
Rev. A (327kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Features
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • RoHS Compliant
Applications
  • DC-DC Merchant Power Supply
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMC86570L Active
Pb-free
Halide free
FDMC86570L PQFN-8 483AW 1 260 Tape and Reel 3000 $0.8533
Market Leadtime (weeks) : 13 to 16

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMC86570L  
 $0.8533 
Pb
H
 Active   
N-Channel
Single
60
±20
3
84
54
-
6.5
4.3
-
29
4790
PQFN-8
Case Outlines
483AW   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.