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NCP51820: High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches

Datasheet: High Speed Half-Bridge Driver for GaN Power Switches
Rev. 2 (795kB)
Product Overview
»View Material Composition
» Product Change Notification
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
Features   Benefits
     
  • 650 V, high side and low side gate driver
 
  • Design margin for AC/DC design
  • Fast propagation delay of 50 ns max
 
  • Suitable for high frequency operation
  • Matched propagation delay of 5 ns max
 
  • Increased efficiency and allow paralleling
  • 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
 
  • Robust design for high switching frequency application
  • Separate source and sink output pin
 
  • Allow control of rise and fall time for EMI tuning
  • Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
 
  • Optimum driving of GaN power switches and simplify design
  • QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
 
  • Small PCB foot print, reduced parasitic, suitable for high frequency operation
Applications   End Products
  • Resonant converters
  • Half bridge and full bridge converters
  • Active clamp flyback converters
  • Totem pole bridgeless PFC
 
  • Power supply for OLED TV
  • High power gaming adapter
  • USD PD cellphone and notebook travel adapter
  • Server / Cloud Data-center Offline power
  • Industrial inverter and motor drive
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
NCP51820GAN1GEVB Active
Pb-free
NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCP51820AMNTWG Active
Pb-free
Halide free
NCP51820 QFN-15 485FN 1 260 Tape and Reel 4000 $0.9333
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 32,000

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCP51820AMNTWG  
 $0.9333 
Pb
H
 Active   
GaN
2
Half-Bridge
Junction Isolation
650
20
1000 / 2000
1
0.5
50
QFN-15
Case Outlines
485FN   
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