FDH210N08: Power MOSFET, N-Channel, UniFETTM, 75 V, 210 A, 5.5 mΩ, TO-247

Datasheet: MOSFET – N-Channel, UniFET™ 75 V, 210 A, 5.5 mΩ
Rev. 3 (271kB)
Product Overview
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View Material Composition
Product Change Notification
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
 
  • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
  • Low Gate Charge (Typ. 232 nC)
  • Low Crss (Typ. 262 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDH210N08 Active
Pb-free
Halide free
FDH210N08 TO-247-3 340CK NA Tube 450 $3.1191
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDH210N08  
 $3.1191 
Pb
H
 Active   
N-Channel
Single
75
4
4
210
462
-
-
5.5
-
232
8743
TO-247-3
Case Outlines
340CK   
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