Low/Medium Voltage MOSFETs | ECH8690

Complementary Dual Power MOSFET 60V

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Overview

ECH8690 is Power MOSFET, 60V, 4.7A, 55mΩ, -60V, -3.5A, 94mΩ, Complememtary Dual ECH8 for general purpose switching applications.

  • This product is general usage and suitable for many different applications

  • On-State Resistance
     N-Channel: RDS(on)1=42 mΩ (typ.)
     P-channel: RDS(on)1=73 mΩ (typ.)
  • Protection diode in
  • 4V drive
  • Nch+Pch MOSFET

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

ECH8690-TL-H

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Active

CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

N

Complementary

PowerTrench® T1

Power 33

Low-Medium Voltage

Logic

0

Dual

0

±60

55

20

2.6

4.7

1.5

-

74

10

18

955

2.8

-

58

45

$0.3192

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Reliability Data

Die Related Summary Data

Device: ECH8690-TL-H

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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