N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • Battery Opperated Tools
  • Solar Inverters
  • Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A
  • Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely LowRDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB0190N807L

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

80

1.7

±20

4

270

250

-

-

-

178

13650

32

103

1990

235

$2.4452

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