FDD6637: P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

Datasheet: FDD6637-D.pdf
Rev. A (372kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low RDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.
Features
 
  • -55 A, -35 V
  • RDS(ON) = 11.6 mΩ @ VGS = -10 V
  • RDS(ON) = 18 mΩ @ VGS = -4.5 V
  • High performance trench technology for extremely low RDS(ON)
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD6637 Active
Pb-free
Halide free
FDD6637 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.5415
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD6637  
 $0.5415 
Pb
H
 Active   
P-Channel
Single
-35
25
-3
-55
57
-
18
11.6
16
25
2370
DPAK-3 / TO-252-3
Case Outlines
369AS   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.