P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low RDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.

  • This product is general usage and suitable for many different applications.
  • -55 A, -35 V
  • RDS(ON) = 11.6 mΩ @ VGS = -10 V
  • RDS(ON) = 18 mΩ @ VGS = -4.5 V
  • High performance trench technology for extremely low RDS(ON)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6637

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

-35

11.6

P-Channel

Single

25

-3

-55

57

-

18

16

25

2370

$0.6281

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