N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω

Lifetime

Overview

N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω

  • This product is general usage and suitable for many different applications.

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

2N7002T

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Lifetime

CAD Model

Pb

A

H

P

SOT-523FL

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

Single

0

60

2000

±20

2

0.115

0.2

-

7500

-

-

37.8

-

-

12.4

6.5

$0.0709

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