N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

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Overview

N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω

  • This product is general usage and suitable for many different applications.
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

2N7002KW

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Active

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

Single

0

60

1600

±20

2.1

0.31

0.3

-

2000

-

0.55

37.8

-

-

25

5

$0.0553

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