P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ

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Overview

This P-Channel MOSFET has been produced using an proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

  • This product is general usage and suitable for many different applications.
  • Maximum RDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
  • Maximum RDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
  • High performance trench technology for extremely low RDS(on)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD4141

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

-40

12.3

P-Channel

Single

±20

-3

-50

69

-

18

-

19

2058

$0.3583

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