Energy Storage Solutions for Next-Generation Power Systems

Enabling Reliable & Efficient Energy Storage Systems

onsemi delivers next-generation energy storage solutions for industrial and renewable applications. With EliteSiC power semiconductors, advanced simulation tools, and robust design resources, we enable efficient, reliable, and scalable Battery Energy Storage Systems (BESS).

Overview

onsemi’s long-term expertise and leading role in renewable energy generation, power management, and energy conversion help customers worldwide overcome the challenges of Energy Storage Systems (ESS). We deliver innovative solutions for the evolution of the power grid, leveraging advanced products such as silicon carbide (SiC) MOSFETs, IGBT modules, gate drivers, and sensing products. These technologies enable efficient power conversion, reliable energy storage, and optimized system performance for renewable energy and grid applications.

Products

IGBT Modules
NXH600N105L7F5S1HG
IGBT Module, I-type NPC 1050 V, 600 A IGBT
IGBT Modules
NXH800H120L7QDSG
Qdual3 1200 V 800 A Half Bridge IGBT Module
Silicon Carbide (SiC) Modules
NXH003P120M3F2PTNG
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH007F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH011F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Silicon Carbide (SiC) MOSFETs
NTBG022N120M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
Silicon Carbide (SiC) MOSFETs
NTBG023N065M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
IGBTs
FGY4L160T120SWD
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A
Gate Drivers
NCP51752
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control
Gate Drivers
NCP51563
5 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing

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Documents

White Papers
Optimizing Residential Solar Energy Systems for Efficiency, Reliability, and Cost
White Papers
Common IGBT Topologies Used in Energy Infrastructure Applications
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
Application Notes
onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
Tutorial
Pairing Gate Drivers to EliteSiC Tutorial
Application Notes
Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator
Collateral Brochure
Overcoming the Challenges of Silicon Carbide to Ensure Application Success

Evaluation Boards/Kits

Evaluation Board
SECO-NCD57000-GEVB
Application daughter-card for NCD57000 IGBT gate driver
Evaluation Board
NCP-NCV51561TO2474LGEVB
The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.
Evaluation Board
NCP-NCV51152TO2474LGEVB
The NCP/V51152 is a family of isolated single−channel gate driver with 4.5 A / 9 A source and sink peak current respectively.
Evaluation Board
SECO-HVDCDC1362-40W-GEVB
SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

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