ON Semiconductor Introduces Mirco-Packaged Voltage Suppression Devices Rated to Meet the Portable Industry’s Highest ESD Protection Standard

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New series of ESD5Z devices provide single line protection to portable and battery operated applications, and deliver superior ESD clamping performance in a low profile 1.6 mm x 0.8 mm footprint

PHOENIX, Ariz. – Feb. 22, 2005 - ON Semiconductor (Nasdaq: ONNN) today introduced a new series of high performance, micro-packaged electrostatic discharge (ESD) protection diodes designed for single line protection of voltage sensitive components in portable and battery operated applications.

The five ESD5Z devices in the new series include the ESD5Z2.5T1 (2.5 V), ESD5Z3.3T1 (3.3 V), ESD5Z5.0T1 (5.0 V), ESD5Z6.0T1 (6.0 V), and ESD5Z7.0T1 (7.0 V). These devices are designed to clamp fast rising ESD pulses, preventing damage to voltage sensitive components on the board. An input waveform of 30 kilovolts (kV) - per the IEC61000-4-2 standard - will be clamped to less than 7 volts (V) in a matter of nanoseconds by the ESD5Z series devices. Their small size facilitates placement near input/output ports where ESD can enter the system, thus suppressing the transient voltage event before it can be coupled into the rest of the board. In their off state, these ESD5Z devices exhibit very low leakage current of 5 nano Amps (nA), making them ideal for applications where power efficiency is paramount. The devices are also suitable for protecting voltage sensitive components from load switching transients on the power line, and can dissipate up to 200 watts (W) with an 8 x 20 µsec pulse waveform. Complete Release

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