Phoenix, Ariz. - August 19, 2009 - ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high performance, energy efficient, silicon solutions, has introduced four new 30 volt (V) Schottky barrier diodes. Housed in an ultra-small 0201 Dual Silicon No-lead (DSN2) chip level package, the new Schottky barrier diodes offer portable electronics designers both the industry’s smallest Schottky diode and best-in-class space-performance.
These new Schottky diodes are available with low forward voltage or low reverse current at forward current ratings of either 100 milliamp (mA) or 200 mA - the latter being the industry’s smallest 200 mA rated parts. The new devices provide an ideal solution for the increasing number of applications where board space is restricted such as mobile handsets, MP3 players and digital cameras.
“Optimizing board layout versus system performance in space constrained applications is a constant challenge for our customers.” said Dan Huettl, director and general manager of ON Semiconductor’s Small Signal Division. “ON Semiconductor has responded with the ultra small 0201 DSN-2 Schottky barrier diodes in support of the system designer’s quest for optimized power management in portable applications”.
The Devices
The Schottky diodes feature solderable metal contacts under the package that enable 100 percent utilization of the package area for active silicon. The new 0201 DSN-2 package – which measures a mere 0.6 mm x 0.3 mm x 0.3 mm - provides three times the board space savings compared to the popular SOD-923 (also known as 0402) which measures 1.0 mm x 0.6 mm x 0.4 mm. Providing the lowest leakage currents on the market, the new devices help designers address power losses, efficiency and switching speeds. The new Schottky diodes have a significant performance per board area advantage versus competing parts housed in traditional plastic molded packages. Class-leading power management characteristics also serve to help prolong battery life in portable equipment applications.
The NSR0xF30NXT5G series devices are optimized for low forward voltage drop (Vf), 370 millivolts (mV) at 10 mA, which further reinforces the advanced, high-performance specification of the series. The NSR0xL30NXT5G series devices are designed for low reverse current (Ir), 0.2 microamps (µA) at 10 V reverse voltage and offer very low leakage, extending battery life. With ESD ratings of Human Body Model: Class 3B and Machine Model: Class C coupled with low thermal resistance the two series help support design engineers challenged with incorporating ever-increasing amounts of circuitry into small spaces. The Schottky diodes are RoHS compliant and have an operating temperature range of –40°C to +125°C, making them suitable for use in equipment that is used in harsh indoor and outdoor environments.
| NSR01F30NXT5G |
30 |
100 |
DSN2 0201 |
Low Vf |
| NSR02F30NXT5G |
30 |
200 |
DSN2 0201 |
Low Vf |
| NSR01L30NXT5G |
30 |
100 |
DSN2 0201 |
Low Ir |
| NSR02L30NXT5G |
30 |
200 |
DSN2 0201 |
Low Ir |
For additional technical information contact Edwin Romero at Edwin.Romero@onsemi.com or visit https://www.onsemi.com.
About ON Semiconductor
With its global logistics network and strong product portfolio, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of high performance, energy efficient, silicon solutions to customers in the power supply, automotive, communication, computer, consumer, medical, industrial, mobile phone, and military/aerospace markets. The company’s broad portfolio includes power, analog, DSP, mixed-signal, advance logic, clock management, non-volatile memory and standard component devices. Global corporate headquarters are located in Phoenix, Arizona. The company operates a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit https://www.onsemi.com.
# # #
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
