Raising IPMs’ System Level Power Density in Response to New Pressures

by  Jonathan Harper  - 05-09-2016 

International legislation, such as the European Union’s Energy-Related Products (ErP) directive is driving the implementation of energy-saving techniques in both consumer industrial sectors. The migration from conventional motors to permanent magnet synchronous (PMSM) or brushless direct current (BLDC) alternatives is enabling higher degrees of energy efficiency. However, these more advanced motors also have greater system complexity associated with them. PMSMs and BLDCs will need more complex drive stages that rely on utilization of inverters.

Inclusion of an inverter element in the power system design has certain implications. Inverters generate more heat and take up markedly more board real estate than the simple triac drives needed for universal motors. As the uptake of PMSMs and BLDCs increases, supplanting outdated motor types, the number of inverters populating PCBs will increase. This is presenting power semiconductor manufacturers with a serious challenge.

A series of innovations in relation to substrate technology have enabled ON Semiconductor to bring a new generation of high density intelligent power modules (IPMs) to market. Thanks to improved thermal performance, which is derived from direct bonded copper (DBC) substrates using fine pitch technology for high routing density, these compact IPMs are substantially smaller than competing products with equivalent current and voltage ratings. They exhibit reduced power losses too.


Compact PIM Package


To learn more about ON Semiconductor’s expertise in Power Technology you can visit us at  booth (Hall 9, Both 353) or attend a series of presentations that company representatives will be giving at PCIM Europe (10th  - 12th May, Nuremburg, Germany).

PCIM logo


Tuesday, May 10

Poster Dialogue Session 3:30 pm – 5:30 pm

  • Intelligent Power Modules
    • PP013 Improvement of System Level Power Density of 15A/600V Intelligent Power Modules 
          Jonathan Harper, ON Semiconductor
          Toshiyuki Iimura, ON Semiconductor
  • Packaging and Reliability
    • PP045 A Recuperation Topology for Power Device Testing 
          Tomas Krecek, ON Semiconductor, CZ
  • Sensor, Control and Protection
    • PP058 Efficiency Maximization for Half-Bridge LC Converter through Automatic Dead Time Tuning 
           Vittorio Crisafulli, ON Semiconductor
           Gianluca Fazio, ON Semiconductor Italy
           Diego Hernandez Gutiérrez, CH


Wednesday, 11 May 2016

Poster Dialogue Session 3:30 pm – 5:30 pm

  • SiC and GaN
    • PP099 An Insightful Evaluation of a 650V High-Voltage GaN Technology in Cascode and Stand-Alone Transistors
           Jaume Roig, German Gomez, Frederick Declercq, Filip Bauwens, ON Semiconductor
           Manuel Fernandez, Diego Gonzalez, University of Oviedo, ES
  • DC/DC Converter II
    • PP140 Application Advantages and Disadvantages of Modern Fast Switching MOSFETs in VRM
           Zhiyang Chen, Ann Starks, ON Semiconductor
  • AC-AC and Multilevel Converters
    •  PP154: Trends in Residential and Industrial Induction Cooking: Topologies and Power Devices for High Efficiency      
           Vittorio Crisafulli, ON Semiconductor

Exhibitor Forum Hall 7 Booth 260

       • Advanced Power MOSFET for Switching Applications
         Christopher Rexer, ON Semiconductor

Industry Forum Hall 6 Booth 248

  • 15:30 – 16:00 Application Level Testing for Power Integrated Modules 
    Jonathan Harper, ON Semiconductor
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