ON Semiconductor Further Extends Scope of IGBT Offering with 1200 V Devices Based on 3rd Generation Ultra Field Stop Technology

PCIM - Nuremberg, Germany. – May 10, 2016 – ON Semiconductor Corporation (Nasdaq: ON), driving energy efficiency innovations, has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications. These 1200 volt (V) devices are able to achieve industry-leading total switching loss (Ets) characteristics; the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer & optimized co-pack diode.

The NGTB40N120FL3WG has an Ets of 2.7 millijoules (mJ), while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCEsat of 1.7 V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55 V, at rated current, with an Ets of 3 mJ. The new Ultra Field Stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are highly suitable for use in Uninterruptible Power Supplies (UPS) and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.

“Our new Ultra Field Stop IGBTs along with optimized fast recovery diodes we manage to hit the sweet spot that perfectly balances VCEsat and Ets, thereby resulting in reduced switching losses, and enhanced power efficiency in hard switching applications, across a broad range of switching frequencies. At the same time it still offers the robust operation and cost effectiveness that engineers expect from IGBTs,” states Asif Jakwani, senior director and general manager for ON Semiconductor’s Power Discrete Division.

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