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Solar Solutions Energy Storage DC Fast EV Charging UPS
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onsemi leverages decades of experience in innovative technologies, reliable, highly efficient and quality of next-gen power semiconductors to shorten your development time while exceeding your power density and beating power loss budgets. We are helping you and your manufacturing team sleep better at night knowing you have helped make the world a better place.

DC Fast EV Charging
Energy Storage
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Uninterruptible Power Supply (UPS)

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SiC MOSFETs

Faster Switching More Compact End-Product

1200V M3S SiC MOSFETs provide up to 20% power loss reduction in hard switching applications compared to industry leading competition

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SiC Modules

Full SiC & Hybrid SiC Modules

Our package technologies optimized for

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts

onsemi SiC Diode Families

Family

Voltages

Optimization

Best Application

D1

View

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

View

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

View

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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onsemi SiC MOSFET Families

Family

Voltages

Optimization

Best Application

M1

View

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

More Details

M2

View

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

More Details

M3

View

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

More Details

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2

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Technical Documents

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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