Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter

  • UPS
  • Solar
  • Power Supply

  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A

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ON Target

Family

Blocking Voltage BVDSS (V)

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RDS(on) Typ @ 25°C (mΩ)

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Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTHL045N065SC1

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CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

M2

650

66

32

105

162

175

$6.3464

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