Silicon Carbide (SiC) MOSFETs | NTH4LN023N065M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L, thin lead

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Overview

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
The new family also features with zero volt switch off. It is assembled in TO247-4L thin lead which helps to reduce PCB footprint and improve power density.

  • Industrial
  • Cloud system
  • UPS / ESS
  • Solar
  • EV Charger
  • AI Data center
  • TO-247-4L Package with Kelvin source configuration and thin lead
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 69 nC)
  • High Speed Switching with Low Capacitance (Coss = 153 pF)
  • 15V to 18V Gate Drive
  • Typ. RDS(on) = 23 mΩ at Vgs = 18V
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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NTH4LN023N065M3S

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Pb

A

H

P

TO-247 4-LEAD, THIN LEADS

340CW

NA

0

TUBE

450

No

SiC MOSFET

650

67

23

69

153

175

Price N/A

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