Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive PFC
  • Automotive DC/DC
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Qualified for Automotive According to AEC−Q101
  • 900V rated
  • Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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NVHL020N090SC1

Active

Pb

A

H

P

TO-247-3LD

1

260

TUBE

450

Y

M2

900

118

20

196

296

175

$28.92

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