NVHL020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-3L, 900 V, 20 mOhm, 118 A
Rev. 2 (262kB)
Product Overview
View Material Composition
Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 900V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
Applications   End Products
  • Automotive PFC
  • Automotive DC/DC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVHL020N090SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL020N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 20 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $16.4195
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL020N090SC1  
 $16.4195 
Pb
A
H
P
 Active   
N-Channel
Single
900
118
20
196
296
175
TO-247-3LD
Case Outlines
340CX   
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