Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Power
  • On Board Charger
  • EV/HEV
  • High Junction Temperature
  • 1200V
  • High UIS, Surge Current, and Avalanche
  • Qualified for Automotive

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Family

Blocking Voltage BVDSS (V)

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Reference Price

NVH4L160N120SC1

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Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

M1

1200

17.3

160

34

49.5

175

$6.0584

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