Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

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Overview

EliteSiC  MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • Typical RDS(on) = 40.8mΩ at Vgs =18V, Id = 25A
  • Qualified for Automotive According to AEC−Q101
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant
  • New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses

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Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NVH4L040N120M3S

Active, New

Pb

A

H

P

TO-247-4

NA

0

F

M3S

1200

43

40

75

80

175

$14.34

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