Silicon Carbide (SiC) MOSFETs | NVC160N120SC1

Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC DC Inverter

  • Automotive EV/HEV

  • 1200 V
  • High Speed Switching with Low Capacitance
  • 100% UIL Tested
  • Qualified for Automotive According to AEC−Q101

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NVC160N120SC1

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Obsolete

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Pb

A

H

P

-

-

NA

0

MTFRM

1

F

M1

1200

17

160

34

50

175

Price N/A

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