Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The Power88 package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. Power88 offers Moisture Sensitivity Level 1 (MSL 1).

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • Power Supply
  • Max Junction Temperature 175°C
  • Leadless thin SMD package
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (Qg(tot) = 105 nC)
  • Low Effective Output Capacitance (Coss = 162 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss
  • 650V rated
  • 100% Avalanche Tested
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 3.1 Ω

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NTMT045N065SC1

Active

Pb

A

H

P

TDFN4 8x8, 2P

1

260

REEL

3000

F

M2

650

55

33

105

162

175

$10.1936

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