NTHL020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

Datasheet: MOSFET — SiC Power, Single N-Channel, TO247-3L, 900 V, 20 mΩ, 118 A
Rev. 2 (259kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Ultra Low Gate Charge
 
  • 196nC
  • High Junction Temperature
 
  • 175°C
  • 900V Rating
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
Applications   End Products
  • UPS
  • DC-DC Converter
  • Boost Inverter
 
  • Solar
  • Power Devices
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHL020N090SC1 Active
Pb-free
Halide free
NTHL020N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 20 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $15.4784
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTHL020N090SC1  
 $15.4784 
Pb
H
 Active   
N-Channel
Single
900
118
20
196
296
175
TO-247-3LD
Case Outlines
340CX   
Application
Diagram - Block
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