NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

PFC
Boost Inverter
PV Charging

End Products

Industrial Power Supply
Solar Inverter

Features

High Junction Temperature
1200V
High UIS, Surge Current, and Avalanche

Material Composition

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Pricing ($/Unit)

NTH4L160N120SC1

Active

TO-247-4

340CJ

TUBE

450

1200

17.3

160

49.5

175

$4.8174

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Silicon Carbide (SiC) MOSFETs | NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Overview

Availability & Samples (size)

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