Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

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Overview

EliteSiC family of Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • SMPS
  • Solar Inverter
  • UPS
  • Power Switching Circuits
  • AUX Power Supply
  • Rail Traction
  • Max Junction Temperature
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery

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Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Pricing ($/Unit)

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NDSH10170A

Active

Pb

A

H

P

TO-247-2LD

NA

0

F

D1

Single

1700

10

1.75

105

40

$5.2894

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