Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, Power88

Favorite

Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar inverter
  • Max Junction Temperature 175 °C
  • Leadless Ultra-thin SMD package
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Pricing ($/Unit)

Loading...

FFSM0465A

Active

Pb

A

H

P

PQFN-4

1

260

Y

D1

Single

650

4

1.75

21

200

$1.5604

More Details

Show More

1-25 of 25

Products per page

Jump to :